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CH551H-30PT
Schottky Rectifier - 0.5Amp 30Volt
Features
-For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -ESD sensitive product handling required
SOD-323
.015(0.40) .009(0.25) .055(1.40) .045(1.15) .070(1.80) .062(1.60) .006(0.177) .003(0.080) .039(1.00) .023(0.60)
Mechanical data
-CaseMolded plastic -EpoxyUL 94V-0 rate flame retardant -TerminalsSolder plated, solderable per MIL-STD-750,method 2026 -PolarityColor band denotes cathode end
.017(0.45) .009(0.25)
.003(0.10) .106(2.70) .090(2.30)
Maximum ratings and Electrical characteristics
TYPE Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward urge Current, 8.3ms single half sine-wave Maximum Instantaneous Forward Voltage Maximum Average Reverse Current at VR = 20V Typical Junction Capacitance between Terminal (Note 1) Operating Temperature Range Storage Temperature Range Note: Measured at 1.0 MHz and applied reverse voltage of 10.0 volts SYMBOL VRRM VRMS VDC IO IFSM VF IR CJ TJ TSTG CH520S-30PT 30 21 20 0.5 2.0 IF = 100mA 0.36 IF = 500mA 0.47 100 15.0 125 -40 - 125 UNIT V V V A A V A pF C C
August 2007 / Rev.5
http:// www.sirectsemi.com
1
CH551H-30PT
10A
100m Ta = 125
FORWARD CURRENT , (A)
REVERSE CURRENT , (A)
1A
10m
1m
75
100m
Ta
=
10m
75
12 5
100u
25
10u -25
-2 5
1m
25
Iu
100u 0 0.1 0.2 0.3 0.4 0.5
100n 0 10 20 30 40
FORWARD VOLTAGE , (V)
REVERSE VOLTAGE , (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
1000
1.0
AVERAGE FORWARD CURRENT , (A)
40
JUNCTION CAPACITANCE , (pF)
0.8
100
0.6
0.4
10
0.2
f = 1MHz 1 0 10 20 30
0 0 25 50 75 100 125 150
REVERSE VOLTAGE , (V)
AMBIENT TEMPERATURE ,
Figure 3. Typical Junction Capacitance
Figure 4. Forward Current Derating Curve
Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com ...Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com
http:// www.sirectsemi.com
2


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